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The Nano-Rennes platform produces engravings on a whole range of materials, either by a wet or a dry way. Chemical treatments are carried out under a chemical hood. Dry etchings use reactive ion etching reactors (GIR, or even RIE) dedicated.
In a generic way, the platform masters the wet and / or dry engravings associated with:

  • Materials of Si sector (Si, Si3N4, SiO2, Ge, SiGe, …)
  • Materials of InP sector (InAs, InGaAs, InAlAs, InGaAsP, InAlGaAs)
  • Polymeric (photoresist, BCB, …) and metallic (In, Au, Ti, Ge, …) materials


►Description of engraving equipment

Dry etching

RIE Microsys 400 Roth&Rau (IETR-GM)
Gas : SF6, O2
Dédicated to Si sector engraving


  • Plate 3 inches max       
  • Secondary vacuum (10-5 mbar)
  • Interferometric control

RIE Alcatel 300 (FOTON-INSA)
Gas : CH4, H2, Ar, O2
Deticated to the InP sector engraving


  • Plate 2 inches
  • Secondary vacuum (10-7 mbar) 
  • Interferometric control

RIE Plassys MG100 (FOTON-INSA)
Gas : SF6, O2
Dedicated to the etching of polymers and passivation layers


  • Plates 2 inches 
  • Secondary vacuum (10-6 mbar)
  • Interferometric control

Gas : O2, SF6

Specificities : 

  • Plates 2 and 3 inches
  • Secondary vacuum(10-7 mbar)      
  • Interferometric control

Plasmafab ETA Electrotech delacquer (FOTON-INSA)
Gas : O2
Resin remover

Specificities :

  • Primary vacuum (10-3 mbar)


Wet etching


Chemical hood (FOTON-INSA and IETR-GM)


Chemical storage cabinet (FOTON-INSA and IETR-GM)

►Examples of achievements

Gravure ruban InP (RIE)
Ribbon InP etching (RIE)
Gravure mésa Si (RIE)
Mesa Si etching (RIE)
Gravure DBR Si/SiN (RIE)
DBR Si/SiN DBR etching (RIE)
Gravure intégrale de substrat InP après report (chimique)
Integral etching of InP substract after transfer (chemical)
Profil interférométrique RIE VCSEL InP
Interferometric profile RIE VCSEL InP
RIE etching
RIE etching
Membrane release (wet etching)
Membrane release (wet etching)
DRIE etching (300µm)
DRIE etching (300µm)