►Know how
The Nano-Rennes platform can etch a whole range of materials either by wet and/or dry etching. Dry etching are made in dedicated reactive ion etching reactors (RIE). Wet etching are performed under dedicated chemical hood.
The platform has know-how in processing the following materials:
- Si-based materials (Si, Si3N4, SiO2, Ge, SiGe, …)
- InP-based materials (InAs, InGaAs, InAlAs, InGaAsP, InAlGaAs)
- Polymers (photoresist, BCB, …) and metals (In, Au, Ti, Ge, …)
►Etching facilities
Dry etching
RIE Microsys 400 Roth&Rau (IETR-GM)
Gas : SF6, O2
Dedicated to Si-based materials
Features:
- 3″ wafers max size
- secondary vacuum (10-5 mbar)
- interferometry controlled etching depth
RIE Alcatel 300 (FOTON-INSA)
Gas : CH4, H2, Ar, O2
Dedicated to InP-based materials
Features:
- 2″ inch wafers
- secondary vacuum (10-7 mbar)
- interformetry controlled etching depth
RIE Plassys MG100 (FOTON-INSA)
Gaz : SF6, O2
Dedicated to polymers and passivation films
Features :
- 2″ wafers
- Secondary vacuum(10-6 mbar)
- Inerferometry controlled etching depth
Deep RIE CORIAL (IETR-GM)
Gas : O2, SF6
Features :
- 2 and 3″ wafers
- Secondary vacuum (10-7 mbar)
- Interferometry controlled etching depth
Plasma cleaner Plasmafab ETA Electrotech (FOTON-INSA)
Gas : O2
Cleaning of remaining resists
Features :
- primary vacuum (10-3 mbar)
Wet etching
Chemical hood (FOTON-INSA et IETR-GM)
Chemical stock cabinet (FOTON-INSA et IETR-GM)
►Etching examples
Etching of InP strip (RIE)
Etching of Si mesa (RIE)
Si/SiN DBR etching (RIE)
RIE-interferometry profile of InP-based VCSELs
Si reactive ion etching
Membrane release by wet etching
DRIE etching (300µm)