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Thermal process – Nano-Rennes
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Thermal process


The Nano-Rennes platform has a set of equipment enabling thermal operations of various types. These operations aim to achieve:

  • Thermal oxidation treatments (wet or dry) of Si
  • Doping by diffusion
  • Heat treatments (high or low) ohmic contact temperature


►Description of heat treatment equipment

RTA ADAX fast annealing furnace (FOTON-INSA)

  • Gas: H2N2
  • Temperature: 100-1100 °C (halogen)
  • Specificities : 
    • 2 inches plate
    • Primary vacuum (10-3 mbar)


5 high temperature furnaces (600-1100 °C) for Si AET(IETR-GM)

  • Wet oxidation furnace (N2, H2N2, H2O)
  • Dry oxidation furnace (N2, H2N2, O2)
  • Bore diffusion doping furnace  (N2, N2H2)
  • Al annealing furnace (N2, N2H2)
  • Specificities :
    • 2 inches substract
    • 20 plate loading trolley
    • Primary vacuum (10-3 mbar)

Low temperature annealing furnace (FOTON-INSA)

  • Gas : N2
  • Temperature : 50-400 °C
  • Spécificité :
    • 2 inches substract

Lambda-Physics recrystallisation excimer laser (IETR-GM)

  • l=  
  • Impulsion =, Pmax =


►Examples of achievements :

Impact du recuit RTA sur contact n sur InP
Impact of RTA annealing on contact n on InP
Profil de température RTA de recuit @375 °C d'un contact n (VCSEL)
RTA annealing temperature profile @ 375 ° C of a contact n (VCSEL)