►Know-how
The Nano-Rennes platform has a set of equipment enabling thermal operations of various types. These operations aim to achieve:
- Thermal oxidation treatments (wet or dry) of Si
- Doping by diffusion
- Heat treatments (high or low) ohmic contact temperature
►Description of heat treatment equipment
RTA ADAX fast annealing furnace (FOTON-INSA)
- Gas: H2N2
- Temperature: 100-1100 °C (halogen)
- Specificities :
- 2 inches plate
- Primary vacuum (10-3 mbar)
- 2 inches plate
5 high temperature furnaces (600-1100 °C) for Si AET(IETR-GM)
- Wet oxidation furnace (N2, H2N2, H2O)
- Dry oxidation furnace (N2, H2N2, O2)
- Bore diffusion doping furnace (N2, N2H2)
- Al annealing furnace (N2, N2H2)
- Specificities :
- 2 inches substract
- 20 plate loading trolley
- Primary vacuum (10-3 mbar)
Low temperature annealing furnace (FOTON-INSA)
- Gas : N2
- Temperature : 50-400 °C
- Spécificité :
- 2 inches substract
Lambda-Physics recrystallisation excimer laser (IETR-GM)
- l=
- Impulsion =, Pmax =
►Examples of achievements :
