Main Menu Languages and contact

UV lithography

►Know-how

The Nano-Rennes platform is equipped with a set of lithography aligners, allowing it to provide standard resin patterns of micron (1 μm), sub-micron (0.7 μm) or even nanometric (50 nm) dimension. on emerging lithography processes. To these aligners are added several stations of resin coating and heat treatment. All of these workstations are located in class 100 environments. 
Three types of aligners equip the platform:

  • UV (UV4 365-435 nm) photolithography : minimal dimension 1 µm
  • Deep-UV photolithography (UV 3 248 nm) : minimal dimension 0.7 µm
  • Nano-print lithography : minimum dimension 50 nm

 

►Description of lithography equipment

UV aligners

Suss Microtec  MA6 (UV3 248nm) aligner (IETR-GM)

  • Sample 1/4 from 2″ to 3″
  • Support for 4″ mask 
  • Three lithography modes (proximity, contact, vacuum chamber)
  • Alignment resolution ± 1 µm
  • Maximum resolution ± 0.5 µm

Suss Microtec  MJB4 (UV4) aligner and nano-imprint (FOTON-INSA)

  • Sample 1/4 from 2″ to 4″
  • Support for 3″ and 4″ mask
  • Three lithography modes (proximity, contact, vacuum chamber)
  • Alignment resolution ± 1 µm
  • Maximum resolution ± 0.7 µm

Specificity : a nano-printing module, for surfaces limited to cm², with a maximum resolution of 50 nm.

Suss Microtec  MJB4 (UV4) aligner and nano-imprint (FOTON-INSA)

  • Sample 1/4 from 2″ to 4″
  • Support for 3″ and 4″ mask
  • Three lithography modes (proximity, contact, vacuum chamber)
  • Alignment resolution ± 1 µm
  • Maximum resolution ± 0.7 µm

Specificity : A nano-printing module, for surfaces limited to cm², with a maximum resolution of 50 nm.

2 Suss Microtec  MJB3 (UV4) aligners (FOTON-INSA and IETR-GM)

  • Sample 1/4 from 2″ to 2″
  • Support for 3″ and 4″ mask
  • Two lithography modes (proximity, contact)
  • Alignment resolution ± 2 µm
  • Maximum resolution ± 1 µm

Specificity: an aligner reserved exclusively for training

Electronic lithography

JEOL electronic lithography system (IETR-GM)

  • Sample 
  • Resolution 10 nm

Miscellanous

Hood
Suss spinner
Gyrset

 

 

4 Suss Microtec type RC8 resiners (FOTON-INSA and IETR-GM)

  • Sample 1/4 from 2″ to 2″
  • 1 Gyrset hood resiner
  • Several resins (from 200 nm to 4-5 µm thick, BCB, PMMA, ..)

 

 

 

4 optical microscopes (FOTON-INSA and IETR-GM)

  • Magnification ×50 to ×200
  • UV filter, camera

 

 

Masks design (IETR-GM and FOTON-INSA)

  • Cadence
  • CleWin

►Examples of achievements

Motif positif
Positive pattern
Motif positif
Positive pattern
Motif lift off
Lift off pattern
Electronic lithography
Electronic lithography (lift off)
Electronic lithography (lift off)