►Know-how

The Nano-Rennes platform has a set of equipments that allows us to do a lot of characterizations such as :

Electrical characterization bench
Optical and electro-optical characterization bench in visible spectral domain (0.4-0.9 µm)
Optical and electro-optical characterization bench in medium infra-red spectral domain (MIR) (0.9-2.1 µm)
Optical characterization bench in femto-second regime in medium infra-red spectral domain (MIR) (1.4-1.6 µm)
Optical and electro-optical characterization bench in infra-red spectral domain (MIR) (1.5-5 µm)

Some measurement benches allow us to do experiments with a temperature between 5 and 350 K.

►Description of the characterization equipment

Hall measurements (IETR-GM and FOTON-OHM)

Note: the range of temperature is 10-300 K

4 dots Measurement Jipelec (IETR-GM)

3 stations of measurement under dots (ITER-GM, FOTON-INSA)

Tracer Tektronik 370A: measurements I(V) (AC, DC), low and high voltage (2 kV)
Tracer Agilent 1500 : measurement I(V), C(V), pulse, max voltage 40V
Impedancemeter HP4192A : measurement of R (from 1 to 10^6 ohm ), L (from 0.019 nH to 1000 H), C (from 0.1 fF to 199 mF), for frequencies from 5 Hz to 13 MHz
Capacitance meter HP4280A : measurement @ 1 MHz (within 10-30 mV)

Notes :

A measurement station reserved for the formations
Caracteristics of componants, measurement of square resistance (method TLM and c-TLM), measurement of resistivity, measurement of impedance, etc…
Measurement within 10-300 K

Optical characterization benches for visible and IR (0.2-12 µm) (FOTON-INSA)

Types of spectroscopy : photoluminescence, absorption, transmission, reflexion, photoluminescence excitation (PLE), sweep of photoluminescence (SPL)
3 lasers CW : 407 nm (50 mW), 532 nm (250 mW), 1064 nm (200 mW)
Co-focale assembly, 40 µm spot
2 spectrometers with detector bars : Si (0.3-1,1 µm, resolution 1,6 nm), and InGaAs extended (2,1 µm, resolution 5 nm)
5 measurement benches with monochromators Jobin-Yvon : a high resolution JY HR 1000, 2 JY 640, 2 JY 250.
Monocanal detector : PbS (Peltier), PbSe (Peltier), InSb (77K), Ge (300 et 77 K), Si, MCT, bolometer : spectral range covered from 0,2 to 12 µm.
Tungestène lamp (150 W) (for absorption or reflexion measurement bench)

Note : all these measurements can be done from 10 to 350 K.

Spectroscopic ellipsometer UV-MIR (0,2-2,1 µm) HORIBA (IETR-GM)

Goniometer 40-90°
µspot 50 µm
Two detectors : bars of Si (0,2-1 µm) detectors and extended InGaAs detector (0,7-2,1 µm)

Bench of optical pump-probe characterization in femto-second regime (1,4-1,64 µm)

Femto-second laser chain :
– Laser CW-lined YAG : 530 nm, P=30W
– Laser Ti:Sa : 800nm, pulse=130 fs, repetition rate 80 MHz, <P>=4 W
– Laser OPO : 1440-1640 nm, pulse 130 fs, 80 MHz, <P> = 300 mW
– Source with supercontinuum impulsions (PCF fiber, spectral width : 50 nm, centered according to the pump (around 1,55 µm)
Detector InGaAs
Co-focal pump/probe, crossed polarisation, dual modulation.

Electro-optical characterization bench of VCSELs MIR devices (0,7-1,7 µm)(FOTON-INSA)
Bench of measurement under optical excitation
– 2 lasers of pumps @ 1.064 µm : CW (P=1W), pulsed (1ns, 5 kHz, <P>= 100 mW)
– Spot with a 10 µm diameter, fiber of big heart collection (62 µm)
– Measurement of P(I) and I(lambda) caracteristics (calibrated Ge detector, and specter analyser Tektronik)
– Regulation of temperature with Peltier (10-60 °C)
Bench of measurement under electrical excitation
– Measurement of P(I) and I(lambda) caracteristics (calibrated Ge detector, and specter analyser Tektronik) – Bench of measurements under dot
– Current source CW keithley2400 (50pA-1 A, Pmax=22 W), pulsed ILX3811 (pulse : 100ps-1000 µs, 0-200 mA)
– Fiber of big heart collection (100 µm)
– Regulation of temperature with Peltier and ILX controller (10-60 °C)

The temperature range is 10-300 K

Two electro-optical caracterisation benches of laser diodes MIR (0,7-1,7 µm) and IR (1,5-5 µm) (FOTON-INSA)

Measurements of caracteristics I(V), P(I), I(lambda)
Detector InGaAs (MIR) or InSb cooled (IR), optical specter analyser Tektronik (IR) or spectrometer Jobin-Yvon JY640
Measurement under dots bench
Regulation of temperature with Peltier

The temperature range is 10-300K

Bench of caracaterisation of absorption by MIR photocurrent (1-1,7 µm) (FOTON-INSA)

Note : The measurements are done under dots with the ambient temperature, or on chips after bonding.

The set of electro-optical experiments allows us to do experiments from 10 to 350 K thanks to three cryostats :

Cryostat He ARS with recycling and compressor 10-350 K (FOTON-INSA)

Applications : photoluminescence caracterisation, photocurrent, VCSELs, …

Cryostat He Oxford with circulation 10-300 K (FOTON-INSA)

An electric access under dots, with micrometric displacements (X, Y, Z)
An intern fluorinated optical fiber access (IR), with micrometric displacements (X, Y, Z)
Spectral range : 0.4-8 µm
Binocular

Applications : lasers ‘edges’ caracterisation, visible, MIR, IR

Cryostat N2 100-350K (FOTON-INSA)

Applications : lasers ‘edges’ caracterisation MIR